8.6 References

Tsai, K.-C. and Gray, P. R.: ‘A 1.9 GHz 1-W CMOS class-E power amplifier for wireless communications’, IEEE Journal of Solid-State Circuits, July 1999, 31, pp. 962–70
Asbeck, P. and Fallesen, C.: ‘A power amplifier for wireless applications in a digital CMOS process’. Proceedings of the 18th Norchip Conference, Turku, Finland, Nov. 2000, pp. 28–33
Cripps, S. C.: ‘RF power amplifiers for wireless communication’ (Artech House, Boston, 1999)
Gonzalez, G.: ‘Microwave transistor amplifiers: analysis and design’ (Prentice Hall, Upper Saddle River, NJ, 2nd ed., 1996)
Kuo, T. and Lusignan, B.: ‘A 1.5 W class-F RF power amplifier in 0.2 μm CMOS technology', in Int. Solid-State Circuits Conf. Dig. Tech. Papers, San Francisco, USA, Feb. 2001, pp. 154–55.
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Gupta, R. and Allstot, D.: ‘Parasitic aware design and optimization of CMOS RF integrated circuits'. IEEE RFIC Symp, Baltimore, USA, June 1998, pp. 325–28
Kenington, P. B.: ‘High-linearity RF amplifier design’ (Artech House, Boston, 2000)
Ramakrishna, S. N.: ‘RF CMOS class C power amplifiers for wire-less communications’ Ph.D. Dissertation, University of California, Berkeley, 2001
Yoo, C. and Huang, Q.: ‘A common-gate switched, 0.9W class E power amplifier with 41 per cent PAE in 0.2 μm CMOS’, in 2000 Symposium on VLSI circuits (Honolulu, HI), June 2000, pp. 56–57
Kumar, S.: ‘Power amplifier linearisation using MMICs’, in Microwave Journal, 35, April 1992, pp. 96–104
Sowlati, T., Salama, A., Sitch, J., Rabjohn, G. and Smith, D.: ‘Low voltage, high efficiency GaAs class E power amplifier for wireless transmitters’, IEEE J. Solid-State Circuits, 30, Oct. 1995, pp. 1074–80
Sokal, N. and Sokal, A.: ‘Class E–a new class of high efficiency, tuned single-ended switching power amplifiers’, IEEE J. Solid-State Circuits, June 1975, SC-10, pp. 168–76
Raab, F. H.: ‘Idealized operation of the class E tuned power amplifier’, IEEE Trans, Circuits Systems, Dec. 1977, CAS-24, pp. 725–35
Alinikula, P., Choi, K. and Long, S.: ‘Design of class E power amplifier with nonlinear parasitic output capacitance’. IEEE Trans. Circuits Systems CAS II, 46, Feb. 1999, pp. 114–18
Khan, L. R.: ‘Single sideband transmission by envelope elimination and restoration’. Proceedings of IRE, July 1952, 40
Chan, K. and Bateman, A.: ‘A 200 MHz IF BiCMOS chip for linear LINC transmitters’. IEEE Trans. Circuits Systems CAS I, June 1995, 42, pp. 321–33
Razavi, B.: RF microelectronics (Prentice-Hall, Upper Saddle River, NJ, 1998)
Su, D. and Mcfarland, W.: ‘An IC for linearizing RF power amplifiers using envelope-elimination and restoration’, IEEE J. Solid-State Circuits, Dec. 1998, 33, pp. 2252–58
Shi, B. and Sundstrom, L.: ‘A low stress 20 dBm power amplifier for LINC transmission with 50% peak PAE in 0.25 μm CMOS’. ESSIRC Dig. Tech. Papers, Duisburg, Germany, Sept. 1999, pp. 282–85
Tarsia, M., Khoury, J. and Boccuzzi, V.: ‘A low stress 20 dBm power amplifier for LINC transmission with 50 peak PAE in 0.25 mm CMOS’, in ESSIRC Dig. Tech. Papers, Sept. 2000, pp. 100–103
Shirvani, A., Su, D. and Wooley, B.: ‘A CMOS RF power amplifier with parallel amplification for efficient power control’, in In Int. Solid-State Circuits Conf. Dig. Tech. Papers, San Francisco, USA, Feb. 2001, pp. 156–57
Rofougaran, A., Chang, G., Rael, J., Chan, J. Y. C., Rofougaran, M., Chan, P. J., Djafari, M., Ku, M.-K., Roth, E. W., Abidi, A. A. and Samuel, H.: ‘A single-chip 900 MHz spread spectrum wireless transceiver in 1 mm CMOS part I: architecture and transmitter design’, IEEE J. Solid-State Circuits, April 1998, 33, pp. 513–34
Rudell, J., Ou, J.-J., Cho, T. B., Chien, G., Brianti, F., Weldon, J. A. and Gray, P. R.: ‘A 1.9 GHz wide band IF double conversion CMOS receiver for cordless telephone applications’, IEEE Journal of Solid-State Circuits, 32, Dec. 1997, pp. 2071–88
Steyaert, M., Borremans, M., Janssens, J., et al.: ‘A 900 MHz/1.8-GHz CMOS receiver for dual-band applications', in In Int. Solid-State Circuits Conf. Dig. Tech. Papers (San Francisco), Feb. 1998, pp. 48–49
Melly, T., Porret, S., Enz, C. C. and Vittoz, E.: ‘A 1.2 V, 433 MHz, 10 dBm, 38% global efficiency FSK transmitter integrated in a standard digital CMOS process'. Proceedings of Custom Integrated Circuits Conference (Orlando, Fl.), May 2000, pp. 179–82
Rofougaran, M., Rofougaran, A., Olgaard, C. and Abidi, A.: ‘A 900 MHz CMOS RF power amplifier with programmable output power', in IEEE Symp. VLSI Circuits Dig. Tech. Papers (Honolulu, HI.), June 1994, pp. 133–34
Wong, S., Bhimnathwala, H., Luo, S., Halai, B. and Navid, S.: ‘A 1W 830 MHz monolithic BiCMOS power amplifier', in In Int. Solid-State Circuits Conf. Dig. Tech. Papers, San Francisco, USA, Feb. 1996, pp. 52–53
Su, D. and Mcfarland, W.: ‘A 2.5-V, 1-Watt monolithic CMOS RF power amplifier’, in Proceedings of Custom Integrated Circuits Conference, Santa Clara, CA, May 1997, pp. 179–82
Mertens, K., Steyaert, M. and Nauwelaers, B.: ‘A 700 MHz 1 W fully differential class E power amplifier in CMOS’, in ESSIRC Dig. Tech. Papers (Stockholm), Sept. 2000, pp. 104–07
Fallesen, C. and Asbeck, P.: ‘A highly integrated 1W CMOS power amplifier for GSM-1800 with 45% PAE’, in Proceedings of the 18th Norchip Conference (Turku, Finland), Nov. 2000, pp. 140–45
Sowlati, T., Greshishchev, Y. and Salama, A.: ‘Phase-correcting feed-back system for class E power amplifier’, IEEE J. Solid-State Circuits, April 1997, 32, pp. 544–50
Rey, C. G.: ‘Predistorter linearizes CDMA power amplifier’, Microwave and RF Magazine, Oct. 1998, 44, pp. 114–23
Sun, J., Li, B. and Chia, M. W.: ‘Linearized and highly efficient CDMA power amplifier,’ Electronic Letters, May 1999, 35, pp. 786–87